Effect of HCl addition on the crystalline fraction in silicon thin films prepared by hot-wire chemical vapor deposition

Vacuum

Volumn 83, Issue 12, 2009, Pages 1431-1434

  Chung, Yung Bin ^a,b   Lee, Dong Kwon ^b   Kim, Chan Soo ^b   Hwang, Nong Moon ^a,b  

^a Nano Systems Institute National Core Research Center (NSI NCRC)   (South Korea)

^b National Research Laboratory of Charged Nanoparticles   (South Korea)

Author keywords

Chemical vapor deposition; Crystal growth; Solar energy material; Thin films

Indexed keywords

CRYSTALLINE FRACTIONS; FIXED FLOW; GLASS SUBSTRATES; HOT WIRE CHEMICAL VAPOR DEPOSITION; RAMAN SPECTRA; REACTOR PRESSURES; SILICON FILMS; SILICON THIN FILM; SOLAR ENERGY MATERIAL; WIRE TEMPERATURE;

CRYSTAL GROWTH; CRYSTALLINE MATERIALS; CRYSTALLIZATION; DEPOSITION; GLASS; GRAIN BOUNDARIES; HELIUM; METALLIC FILMS; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SOLAR ENERGY; SOLAR RADIATION; THIN FILMS; VAPORS; WIRE;

CHEMICAL VAPOR DEPOSITION;

EID: 67650726582     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.05.004     Document Type: Article

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