Effects of deposition pressure on the microstructural and optoelectrical properties of B-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films grown by hot-wire chemical vapor deposition

Microelectronics Journal

Volumn 39, Issue 1, 2008, Pages 12-19

  Luo, Peiqing ^a   Zhou, Zhibin ^a   Li, Youjie ^a   Lin, Shuquan ^a   Dou, Xiaoming ^a   Cui, Rongqiang ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

B doped nc Si:H; Deposition pressure; HWCVD; Properties

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FILM GROWTH; NANOCRYSTALLINE MATERIALS; PRESSURE EFFECTS; THIN FILMS;

CRYSTALLINITY; HOT WIRE CHEMICAL VAPOR DEPOSITION (HWCVD); HYDROGEN DILUTION;

SILICON;

EID: 38049024136     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.10.019     Document Type: Article

References (36)

1. Hernandez A.V., Torchynska T.V., Matsumoto Y., Sandoval S.J., Dybiec M., Ostapenko S., and Shcherbina L.V. Microelectron. J. 36 (2005) 510
2. Ovchinnikov V., Novikov S., Toivola T., and Sinkkonen J. Microelectron. J. 36 (2005) 502
3. Hu G.Y., O'Connell R.F., He Y.L., and Yu M.B. J. Appl. Phys. 78 (1995) 3945
4. Saleh R., and Nickel N.H. Thin Solid Films 427 (2003) 266
5. Ovchinnikov V., Sokolov V., and Franssila S. Microelectron. J. 34 (2003) 579
6. Yamamoto K., Yoshimi M., Tawada Y., Okamoto Y., and Nakajima A. Sol. Energy Mater. Sol. Cells 66 (2001) 117
7. Klein S., Finger F., Carius R., and Lossen J. Thin Solid Films 501 (2006) 43
8. Mai Y., Klein S., Carius R., Stiebig H., Geng X., and Finger F. Appl. Phys. Lett. 87 (2005) 073503
9. van Veen M.K., van der Werf C.H.M., and Schropp R.E.I. J. Non-Cryst. Solids 338-340 (2004) 655
10. Klein S., Finger F., Carius R., Rech B., Houben L., Luysberg M., and Stutzmann M. Mater. Res. Soc. Symp. Proc. 715 (2002) A26.2
11. Fonrodona M., Soler D., Villar F., Escarré J., Ascesi J.M., Bertomeu J., and Andreu J. Thin Solid Films 501 (2006) 247
12. Smit C., van Swaaij R.A.C.M.M., Donker H., Petit A.M.H.N., Kessels W.M.M., and van de Sanden M.C.M. J. Appl. Phys. 94 (2003) 3582
13. Voutsas A.T., Hatalis M.K., Boyce J., and Chiang A. J. Appl. Phys. 78 (1996) 6999
14. M.A. Renucci, J.B. Renucci, M. Cardona, in: M. Balkanski (Ed.), Proceedings of the Second International Conference on Light Scattering in Solids, Flammarion, Paris, 1971, p. 326.
15. He Y.L., Yin C.Z., Cheng G.X., Wang L.C., and Liu X.N. J. Appl. Phys. 75 (1994) 797
16. Klein S., Finger F., Carius R., and Stutzmann M. J. Appl. Phys. 98 (2005) 024905
17. Oshima T., Yamada A., and Konagai M. Jpn. J. Appl. Phys. 36 (1997) 6481
18. Beckers I., Nickel N.H., Pilz W., Pilz W., and Fuhs W. J. Non-Cryst. Solids 227-230 (1998) 847
19. Wang K.C., Hwang H.L., Leong P.T., and Yew T.R. J. Appl. Phys. 77 (1995) 6542
20. Chen H., Gullanar M.H., and Shen W.Z. J. Cryst. Growth 260 (2004) 91
21. Gullanar M.H., Chen H., Wei W.S., Cui R.Q., and Shen W.Z. J. Appl. Phys. 95 (2004) 3961
22. Ichikawa M., Tsushima T., Yamada A., and Konagai M. Jpn. J. Appl. Phys. 39 (2000) 712
23. Chen H., and Shen W.Z. Chin. J. Semicond. 27 (2006) 583
24. Forouhi A.R., and Bloomer I. Phys. Rev. B 34 (1986) 7018
25. Jellison Jr. G.E. F.A. Modine. Appl. Phys. Lett. 69 (1996) 371
26. Adachi S. J. Appl. Phys. 68 (1996) 1192
27. Djurisic A.B., Chan Y., and Li E.H. Mater. Sci. Eng. R 38 (2002) 237
28. Davazoglou D., and Kouvatsos D.N. J. Appl. Phys. 92 (2002) 4470
29. Cho Y.J., Nguyen N.V., Richter C.A., Ehrstein J.R., Lee B.H., and Lee J.C. Appl. Phys. Lett. 80 (2002) 1249
30. Chen H., and Shen W.Z. J. Appl. Phys. 96 (2004) 1024
31. Amans D., Callard S., Gagnaire A., Joseph J., Ledoux G., and Huisken F. J. Appl. Phys. 93 (2003) 4173
32. Nakajima A., Sugita Y., Kawamura K., Tomita H., and Yokoyama N. J. Appl. Phys. 80 (1996) 4006
33. Achiq A., Rizk R., Gouribileau F., Madrante R., Garrido B., Perezrodriguez A., and Morante J.R. J. Appl. Phys. 83 (1998) 5797
34. Herve P.J.L., and Vandamme L.K.J. J. Appl. Phys. 77 (1995) 5476
35. Shimakawa K. J. Non-Cryst. Solids 223 (2000) 266
36. Miyajima S., Kim M., Ide Y., Yamada A., and Konagai M. Jpn. J. Appl. Phys. 42 (2003) 3328