메뉴 건너뛰기




Volumn 395, Issue 6701, 1998, Pages 481-483

Electric-field-enhanced crystallization of amorphous silicon

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; ELECTRIC FIELD EFFECTS; ELECTRON DIFFRACTION; FILM PREPARATION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES;

EID: 3142561382     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/26711     Document Type: Article
Times cited : (214)

References (9)
  • 1
    • 0000339755 scopus 로고
    • Solid phase crystallization of thin films of Si prepared by plasma enhanced chemical vapor deposition
    • Masaki, Y., LeComber, P. G. & Fitzgerald, A. G. Solid phase crystallization of thin films of Si prepared by plasma enhanced chemical vapor deposition. J. Appl. Phys. 74, 129-134 (1993).
    • (1993) J. Appl. Phys. , vol.74 , pp. 129-134
    • Masaki, Y.1    LeComber, P.G.2    Fitzgerald, A.G.3
  • 2
    • 0028428652 scopus 로고
    • Metal-contact-induced crystallization of semiconductors
    • Konno, T. J. & Sinclair, R. Metal-contact-induced crystallization of semiconductors. Mater. Sci. Eng. A 179/180, 426-432 (1994).
    • (1994) Mater. Sci. Eng. A , vol.179-180 , pp. 426-432
    • Konno, T.J.1    Sinclair, R.2
  • 3
    • 11644268068 scopus 로고
    • Low temperature crystallization of hydrogenated amorphous silicon induced by nickel suicide formation
    • Kawazu, Y., Kudo, H., Onari, S. & Arai, T. Low temperature crystallization of hydrogenated amorphous silicon induced by nickel suicide formation. Jpn J. Appl. Phys. 29, 2698-2704 (1990).
    • (1990) Jpn J. Appl. Phys. , vol.29 , pp. 2698-2704
    • Kawazu, Y.1    Kudo, H.2    Onari, S.3    Arai, T.4
  • 4
    • 0031170162 scopus 로고    scopus 로고
    • A novel self-aligned polycrystalline silicon thin-film transistor using suicide layers
    • Ryu, J. I., Kim, H. C., Kim, S. K. & Jang, J. A novel self-aligned polycrystalline silicon thin-film transistor using suicide layers. IEEE Electron Device Lett. 18, 272-274 (1997).
    • (1997) IEEE Electron Device Lett. , vol.18 , pp. 272-274
    • Ryu, J.I.1    Kim, H.C.2    Kim, S.K.3    Jang, J.4
  • 6
    • 0025505011 scopus 로고
    • Silicide precipitation and silicon crystallization in nickel implanted amorphous silicon thin films
    • Camareata, R. C., Thompson, C. V., Hayzelden, C. & Tu, K. N. Silicide precipitation and silicon crystallization in nickel implanted amorphous silicon thin films. J. Mater. Res. 5, 2133-2138 (1990).
    • (1990) J. Mater. Res. , vol.5 , pp. 2133-2138
    • Camareata, R.C.1    Thompson, C.V.2    Hayzelden, C.3    Tu, K.N.4
  • 7
    • 36449004575 scopus 로고
    • Silicide formation and silicide-mediated crystallization of nickel-implanted amorphous silicon thin films
    • Hayzelden, C. & Batstone, J. L. Silicide formation and silicide-mediated crystallization of nickel-implanted amorphous silicon thin films. J. Appl. Phys. 73, 8279-8289 (1993).
    • (1993) J. Appl. Phys. , vol.73 , pp. 8279-8289
    • Hayzelden, C.1    Batstone, J.L.2
  • 8
    • 0031548655 scopus 로고    scopus 로고
    • Effect of electric field on silicide formation
    • Murakami, H., Ono, K. & Takai, H. Effect of electric field on silicide formation. Appl. Surf. Sci. 117/ 118. 289-293 (1997).
    • (1997) Appl. Surf. Sci. , vol.117-118 , pp. 289-293
    • Murakami, H.1    Ono, K.2    Takai, H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.