Effects of low argon dilution ratio on the nanocrystallization and properties of a-Si:H thin films

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 11, 2010, Pages 7667-7670

  Li, Zhi ^a   Li, Wei ^a   Cai, Haihong ^a   Gong, Yuguang ^a   Jiang, Yadong ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

FTIR; Nanocrystallization; PECVD; Raman; TEM

Indexed keywords

A-SI:H; ARGON DILUTION; CRYSTALLINE VOLUME FRACTION; DARK CONDUCTIVITY; DEPOSITION PARAMETERS; DEPOSITION PROCESS; DILUTION GAS; DILUTION RATIO; ELECTRICAL PROPERTY; FTIR; GRAIN SIZE; GROWTH OF THIN FILMS; HYDROGEN CONTENTS; NANO GRAINS; OPTICAL GAP; PECVD; RADIO FREQUENCIES; RAMAN; STRUCTURE AND PROPERTIES; TEM; TRANSMISSION ELECTRON MICROSCOPE;

ARGON; CRYSTALLINE MATERIALS; DEPOSITION; DILUTION; ELECTRIC PROPERTIES; NANOCRYSTALLIZATION; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RADIO BROADCASTING; RADIO TRANSMISSION; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; TITRATION; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION;

OPTICAL FILMS;

EID: 79955541917     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.2777     Document Type: Conference Paper

References (20)

1. P. Balls, Nature 409, 974 (2001).
2. D. L. Staebler, R. S. Crandall, and R. Williams, Appl. Phys. Lett. 39, 733 (1981).
3. D. L. Staebler and C. R. Wronski, Appl. Phys. Lett. 31, 292 (1977).
4. E. Vallat-Sauvain, U. Kroll, J. Meier, A. Shah, and J. PohI, J. Appl. Phys. 87, 3137 (2000).
5. S. B. Li, Z. M. Wu, Y. D. Jiang, W. Li, N. M. Liao, and J. S. Yu, Nanotechnology 085, 706 (2008).
6. G. van Elzakker, V. Nadazdy, F. D. Tichelaar, J. W. Metselaar, and M. Zeman, Thin Solid Films 511, 252 (2006).
7. K. Bhattacharya and D. Das, Nanotechnology 415, 704 (2007).
8. J.-H. Yoon, J.-Y. Lee, and D.-H. Park, J. Non-cryst. Solids 338, 465 (2004).
9. D. L. Young, P. Stradins, Y. Xu, L. M. Gedvilas, E. Iwaniczko, Y. Yan, H. M. Branz, Q. Wang, and D. L. Williamson, Appl. Phys. Lett. 90, 081923 (2007).
10. Z. F. Di, Y. Q. Wang, M. Nastasi, L. Shao, J. K. Lee, and N. D. Theodore, Appl. Phys. Lett. 93, 104103 (2008).
11. U. K. Das, P. Chaudhuri, and S. T. Kshirsagar, J. Appl. Phys. 80, 5389 (1996).
12. D. Das, Thin Solid Films 476, 237 (2005).
13. A. A. Langford, M. L. Fleet, B. P. Nelson, W. A. Lanford, and N. Maley, Phys. Rev. B 45, 13367 (1992).
14. M. H. Brodsky, M. Cardona, and J. J. Cuomo, Phy. Rev. B 16, 3556 (1977).
15. G. Lucovsky, R. J. Nemanich, and J. C. Knights, Phys. Rev. B 19, 2064 (1979).
16. M. J. Kushner, J. Appl. Phys. 63, 2532 (1988).
17. S. Veprek, F. A. Sarott, and Z. Iqbal, Phys. Rev. B 36, 3344 (1987).
18. G. Yue, J. D. Lorentzen, J. Lin, D. Han, and Q. Wang, Appl. Phys. Lett. 75, 492 (1999).
19. E. Bustarret, M. A. Hachicha, and M. Brunel, Appl. Phys. Lett. 52, 1675 (1988).
20. Y. He, C. Yin, G. Cheng, L. Wang, X. Liu, and G. Y. Hu, J. Appl. Phys. 75, 797 (1994).