Low temperature deposition of crystalline silicon on glass by hot wire chemical vapor deposition

Journal of Crystal Growth

Volumn 327, Issue 1, 2011, Pages 57-62

  Chung, Yung Bin ^a   Park, Hyung Ki ^a   Lee, Dong Kwon ^a   Jo, Wook ^b   Song, Jean Ho ^c   Lee, Sang Hoon ^a   Hwang, Nong Moon ^a  

^a Seoul National University   (South Korea)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^c SAMSUNG Electronics   (South Korea)

Author keywords

A3. Chemical vapor deposition processes; A3. Polycrystalline deposition; B2. Semiconducting silicon; B3. Solar cells

Indexed keywords

AMORPHOUS SILICON FILM; B2. SEMICONDUCTING SILICON; B3. SOLAR CELLS; CHEMICAL VAPOR DEPOSITION PROCESS; CRYSTALLINE SILICON FILMS; CRYSTALLINE SILICONS; EXCIMER LASER ANNEALING; GLASS SUBSTRATES; HOT WIRE CHEMICAL VAPOR DEPOSITION; INCUBATION LAYER; LOW-TEMPERATURE DEPOSITION; METAL-INDUCED CRYSTALLIZATION; POLY CRYSTALLINE DEPOSITION;

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; DEPOSITION; EXCIMER LASERS; FILM PREPARATION; FLAT PANEL DISPLAYS; GALVANOMAGNETIC EFFECTS; GLASS; GLASS LASERS; HALL MOBILITY; METALLIC FILMS; PLASMA DEPOSITION; PLASMA DISPLAY DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; WIRE;

AMORPHOUS SILICON;

EID: 79960166387     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.05.004     Document Type: Article

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