Advances in plasma-enhanced chemical vapor deposition of silicon films at low temperatures

Current Opinion in Solid State and Materials Science

Volumn 6, Issue 5, 2002, Pages 425-437

  Collins, R W ^a   Ferlauto, A S ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Amorphous silicon; Film growth mechanisms; Hydrogenated silicon; Microrystalline silicon; Plasma enhanced chemical vapor deposition; Silicon thin films

Indexed keywords

FILM; SILICON; VAPOR DEPOSITION;

EID: 0036819843     PISSN: 13590286     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1359-0286(02)00095-5     Document Type: Article

References (50)

1. Amorphous and microcrystalline semiconductors-science and technology
2. Amorphous and heterogeneous silicon thin films
3. Amorphous and heterogeneous silicon-based thin films
4. Amorphous and microcrystalline semiconductors-science and technology
5. Kinetics of surface growth: Phenomenology, scaling, and mechanisms of smoothening and roughening
6. Time of flight mobility measurements in a-Si:H grown under controlled energy ion bombardment
7. Control of plasma and surface conditions for low defect density a-Si:H at high growth rates
8. Plasma and surface reactions for obtaining low defect density amorphous silicon at high growth rates
9. Gas phase diagnosis and high growth rate of stable a-Si:H
10. High-rate growth of stable a-Si:H
11. Effect of higher- silane formation on electron temperature in a silane glow discharge plasma
12. Guiding principles for obtaining stabilized amorphous silicon at larger growth rates
13. x:H deposition: Excursions in preparation parameter space guided by real time spectroellipsometry
14. Effect of hydrogen dilution on the structure of amorphous silicon alloys
15. Optimization of hydrogenated amorphous silicon p-i-n solar cells with two-step i-layers guided by real time spectroscopic ellipsometry
16. High rate growth of microcrystalline silicon at low temperatures
17. Low temperature growth of microcrystalline silicon and its application to solar cells
18. Anomalous behavior of electron temperature in silane glow discharge plasmas
19. Evolutionupary phase diagrams for plasma-enhanced chemical vapor deposition of silicon films from hydrogen-diluted silane
20. Defect formation during growth of amorphous silicon
21. Importance of surface processes in defect formation in a-Si:H
22. Thin film coalescence in hydrogenated amorphous silicon probed by spectroamorphous scopic ellipsometry with millisecond scale resolution
23. Deposition mechanism of hydrogenated amorphous silicon
24. Growth processes of hydrogenated amorphous silicon
25. Phase diagrams for the optimization of rf plasma enhanced chemical vapor deposition of a-Si:H: Variations in plasma power and substrate temperature
26. Extended phase diagrams for guiding plasma-enhanced chemical vapor deposition of silicon thin films for photovoltaic applications
27. Surface microchemical reactions during hydrogenated silicon growth studied by in situ ESR technique
28. Fast diffusion of H and creation of dangling bonds in hydrogenated amorphous silicon studied by in situ ESR
29. Surface reactions in very low temperature (<150 °C) hydrogenated amorphous silicon deposition, and applications to thin film transistors
30. Surface transport kinetics in low temperaproperty ture silicon deposition determined from topography evolution
31. Ab initio analysis of silyl precursor nearphysisorption and hydrogen abstraction during low temperature silicon deposition
32. Binding and surface diffusion of SiH 3 radicals on a growing a-Si:H surface
33. Experimental evidence for an inhomogeneous surface dangling bond limited growth mechanism in a-Si:H
34. Surface roughness evolution of a-Si:H growth and its relation to the growth mechanism
35. Local equilibrium-model of morphological instabilities in chemical vapor-deposition
36. Columnar growth in thin-films
37. A novel preparation technique for preparing hydrogenated amorphous silicon with a more rigid and stable Si network
38. Roles of atomic- hydrogen in chemical annealing
39. Chemical-equilibrium model of optimal a-Si:H growth tofrom SiH
40. Model for growth of a-Si:H and its alloys
41. Nucleation mechanism of microcrystalline silicon studied by real time spectroscopic ellipsometry and infrared spectroscopy
42. Microcrystalline nucleation sites in the sub-surface of hydrogenated amorphous silicon
43. Depth profiling of silicon-hydrogen bonding modes in amorphous and microcrystalline Si:H thin films by real-time infrared spectroscopy and spectroscopic ellipsometry
44. Effect of strained Si-Si bonds in amorphous silicon incubation layer on microcrystalline silicon nucleation
45. Mechanical stress in thin a-Si:H films
46. Depth distribution of hydrogen and intrinsic stress in a-Si:H films prepared from hydrogen-diluted silane
47. Thickness evolution of the micro-structural and optical properties of Si:H films in the amorphous-to-microcrystalline phase transition region