Effect on thickness of Al layer in poly-crystalline Si thin films using aluminum(Al) induced crystallization method

Journal of Nanoscience and Nanotechnology

Volumn 11, Issue 2, 2011, Pages 1350-1353

  Jeong, Chaehwan ^a   Na, Hyeon Sik ^b   Lee, Suk Ho ^c  

^a Korea Institute of Industrial Technology   (South Korea)

^b Plustek Inc   (South Korea)

^c Mokpo National University   (South Korea)

Author keywords

Aluminum; Aluminum induced crystallization; Amorphous silicon; Layer exchange; Polycrystalline silicon; Thin films

Indexed keywords

ALUMINUM-INDUCED CRYSTALLIZATION; AMORPHOUS SILICON (A-SI); ANNEALING PROCESS; BI-LAYER; CRYSTALLINE FRACTIONS; DC SPUTTERING; FAST RESPONSE; INDUCED CRYSTALLIZATION; LAYER EXCHANGE; POLY-CRYSTALLINE SILICON; POLY-SI FILMS; POLYCRYSTALLINE; POLYCRYSTALLINE PHASE; POLYCRYSTALLINE SILICON (POLY-SI); PROCESS TIME; SOLAR-CELL APPLICATIONS; STRUCTURAL AND ELECTRICAL PROPERTIES; WHOLE PROCESS;

ALUMINUM COATINGS; AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; POLYSILICON; THIN FILMS;

ALUMINUM;

EID: 84863027032     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2011.3397     Document Type: Conference Paper

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