Illumination effects on electrical characteristics of GaN/AlGaN/GaN heterostructures and heterostructure field effect transistors and their elimination by proper surface passivation

Journal of Applied Physics

Volumn 112, Issue 1, 2012, Pages

  Fagerlind, M ^a   Rorsman, N ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ACCUMULATION LAYERS; ALGAN LAYERS; AMBIENT ILLUMINATION; CAP LAYERS; DIFFERENT DISTRIBUTIONS; ELECTRICAL CHARACTERISTIC; HALL MEASUREMENTS; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; HETEROSTRUCTURE MATERIALS; ILLUMINATION EFFECT; ILLUMINATION INVARIANT; PHOTOCONDUCTANCE; SILICON NITRIDE PASSIVATION; SURFACE PASSIVATION; TIME CONSTANTS;

HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; JUNCTION GATE FIELD EFFECT TRANSISTORS; PASSIVATION; SILICON NITRIDE; TWO DIMENSIONAL ELECTRON GAS;

ELECTRIC FIELD EFFECTS;

EID: 84864134720     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4730782     Document Type: Article

References (29)

1. J. Zhang, X. Hu, A. Lunev, J. Deng, Y. Bilenko, T. M. Katona, M. S. Shur, R. Gaska, and M. A. Khan, Jpn. J. Appl. Phys., Part 1 44, 7250 (2005). 10.1143/JJAP.44.7250
2. S.-J. Chang, H. Hung, Y.-C. Lin, M.-H. Wu, H. Kuan, and R.-M. Lin, Jpn. J. Appl. Phys., Part 1 46, 2471 (2007). 10.1143/JJAP.46.2471
3. J. Z. Li, J. Y. Lin, H. X. Jiang, M. A. Khan, and Q. Chen, J. Appl. Phys. 82, 1227 (1997). 10.1063/1.365893
4. X. Z. Dang, C. D. Wang, E. T. Yu, K. S. Boutros, and J. M. Redwing, Appl. Phys. Lett. 72, 2745-2747 (1998). 10.1063/1.121077
5. S. J. Chung, B. Karunagaran, S. Velumani, C. H. Hong, H. J. Lee, and E. K. Suh, Appl. Phys. A: Mater. Sci. Process. A86, 521-524 (2007). 10.1007/s00339-006-3804-9
6. E. Arslan, S. Butun, S. B. Lisesivdin, M. Kasap, S. Ozcelik, and E. Ozbay, J. Appl. Phys. 103, 103701 (2008). 10.1063/1.2921832
7. B. K. Li, W. K. Ge, J. N. Wang, and K. J. Chen, Appl. Phys. Lett. 92, 082105 (2008). 10.1063/1.2888743
8. P. B. Klein, S. C. Binari, K. Ikossi-Anastasiou, A. E. Wickenden, D. D. Koleske, R. L. Henry, and D. S. Katzer, Electron. Lett. 37, 661 (2001). 10.1049/el:20010434
9. T. Mizutani, Y. Ohno, M. Akita, S. Kishimoto, and K. Maezawa, Phys. Status Solidi A 194, 447 (2002). 10.1002/1521-396X(200212)194:2<447::AID- PSSA447>3.0.CO;2-7
10. P. Valizadeh, E. Alekseev, D. Pavlidis, Y. Feng, and H. Morkoc, Solid-State Electron. 50, 282 (2006). 10.1016/j.sse.2005.12.006
11. C. K. Yang, P. Roblin, A. Malonis, A. Arehart, S. Ringel, C. Poblenz, Y. Pei, J. Speck, and U. Mishra, IEEE MTT-S Int. Microwave Symp. Dig. 1-3, 1209 (2009). 10.1007/s00339-006-3804-9
12. M. Fagerlind, H. Zirath, and N. Rorsman, Semicond. Sci. Technol. 24, 045014 (2009). 10.1088/0268-1242/24/4/045014
13. J. Y. Shiu, V. Desmaris, N. Rorsman, K. Kumakura, T. Makimoto, H. Zirath, and E. Y. Chang, Semicond. Sci. Technol. 22, 717 (2007). 10.1088/0268-1242/22/ 7/007
14. M. Sudow, M. Fagerlind, M. Thorsell, K. Andersson, N. Billstrom, P. A. Nilsson, and N. Rorsman, IEEE Trans. Microwave Theory Tech. 56, 1827 (2008). 10.1109/TMTT.2008.927317
15. M. Thorsell and K. Andersson, IEEE Trans. Microwave Theory Tech. 60, 149-157 (2012). 10.1109/TMTT.2011.2170090
16. K. Shiojima and N. Shigekawa, Jpn. J. Appl. Phys., Part 1 43, 100 (2004). 10.1143/JJAP.43.100
17. N. Nepal, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 87, 242104 (2005). 10.1063/1.2142333
18. M. Fagerlind, F. Allerstam, E. O. Sveinbjornsson, N. Rorsman, A. Kakanakova-Georgieva, A. Lundskog, U. Forsberg, and E. Janzen, J. Appl. Phys. 108, 014508 (2010). 10.1063/1.3428442
19. J. F. Muth, X. Zhang, A. Cai, D. Fothergill, J. C. Roberts, P. Rajagopal, J. W. Cook, Jr., E. L. Piner, and K. J. Linthicum, Appl. Phys. Lett. 87, 192117 (2005). 10.1063/1.2123396
20. M. Motyka, M. Syperek, R. Kudrawiec, J. Misiewicz, M. Rudzinski, P. R. Hageman, and P. K. Larsen, Appl. Phys. Lett. 89, 231912 (2006). 10.1063/1.2399372
21. T. E. Cook, Jr., C. C. Fulton, W. J. Mecouch, R. F. Davis, G. Lucovsky, and R. J. Nemanich, Int. J. High Speed Electron. Syst. 14, 107-25 (2004). 10.1142/S0129156404002260
22. C. Nordling and J. Sterman, Physics Handbook, 6 ed. (Studentlitteratur, Lund, 2002).
23. R. L. Petritz, Phys. Rev. 110, 1254 (1958). 10.1103/PhysRev.110.1254
24. J. Zhao, Z. Lin, T. D. Corrigan, Z. Wang, Z. You, and Z. Wang, Appl. Phys. Lett. 91, 173507 (2007) 10.1063/1.2798500
25. R. Gaska, M. Shur, A. Bykhovski, A. Orlov, and G. Snider, Appl. Phys. Lett. 74, 287 (1999). 10.1063/1.123001
26. M. Shur, B. Gelmont, and M. Asif Khan, J. Electron. Mater. 25, 777-785 (1996). 10.1007/BF02666636
27. P. Javorka, A. Alam, M. Marso, M. Wolter, A. Fox, M. Heuken, and P. Kordo, Phys. Status Solidi A 194, 472 (2002). 10.1002/1521-396X(200212)194: 2<472::AID-PSSA472>3.0.CO;2-F
28. M. Higashiwaki, S. Chowdhury, B. L. Swenson, and U. K. Mishra, Appl. Phys. Lett. 97, 222104 (2010). 10.1063/1.3522649
29. S. P. Grabowski, M. Schneider, H. Nienhaus, W. Monch, R. Dimitrov, O. Ambacher, and M. Stutzmann, Appl. Phys. Lett. 78, 2503-2505 (2001). 10.1063/1.1367275