Thermal Stability of Electrical Properties in AlGaN/GaN Heterostructures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 1, 2004, Pages 100-105

  Shiojima, Kenji ^a   Shigekawa, Naoteru ^a  

^a NTT CORPORATION   (Japan)

Author keywords

AlGaN GaN heterostructure; HEMT; Sheet resistance; Thermal stability; Thickness dependence

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

SHEET RESISTANCE; THICKNESS DEPENDENCE;

HETEROJUNCTIONS;

EID: 1842660018     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.100     Document Type: Article

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