Anomalous effects of temperature and UV illumination on the operation of AlGaN/GaN MODFET

Solid-State Electronics

Volumn 50, Issue 2, 2006, Pages 282-286

  Valizadeh, Pouya ^a,e   Alekseev, Egor ^b   Pavlidis, Dimitris ^a,c   Yun, Feng ^d   Morkoç, Hadis ^d  

^a UNIVERSITY OF MICHIGAN   (United States)

^b Inmet   (United States)

^c DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^d Virginia Commonwealth University   (United States)

^e West Virginia University   (United States)

Author keywords

Annealing; Current collapse; Enhancement mode; MODFET

Indexed keywords

ALUMINUM NITRIDE; CHARACTERIZATION; ELECTRIC CURRENTS; FABRICATION; GALLIUM NITRIDE; NATURAL FREQUENCIES; OSCILLATIONS; RAPID THERMAL ANNEALING; ULTRAVIOLET RADIATION;

ANOMALOUS EFFECTS; ENHANCEMENT-MODE; OSCILLATION FREQUENCY;

GATES (TRANSISTOR);

EID: 32344438956     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.12.006     Document Type: Article

References (16)

1. A. Özgür, W. Kim, Z. Fan, A. Botchkarev, A. Salvador, and S.N. Mohammad High transconductance-normally-off GaN MODFETs Electron Lett 31 1995 1389 1390
2. M. Asif Khan, Q. Chen, C.J. Sun, J.W. Yang, M. Blasingame, and M.S. Shur Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistor Appl Phys Lett 68 1996 514 516
3. X. Hu, G. Simin, J. Yang, M. Asif Khan, R. Gaska, and M.S. Shur Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate Electron Lett 36 2000 753 754
4. V. Kumar, A. Kuliev, T. Tanaka, Y. Otoki, and I. Adesida High transconductance enhancement-mode AlGaN/GaN HEMT on SiC substrate Electron Lett 39 2003 1758 1760
5. A. Endoh, Y. Yamashita, K. Ikeda, M. Higashiwaki, K. Hikosaka, and T. Matsui Non-recessed-gate enhancement-mode AlGaN/GaN high electron mobility transistors with high RF performance J Appl Phys 43 2004 2255 2258
6. W. Lanford, T. Tanaka, Y. Otoki, and I. Adesida Recessed-gate enhancement-mode GaN HEMT with high threshold voltage Electron Lett 41 2005 449 450
7. Y. Cai, Y. Zhou, K. Chen, and K. Lau High performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment IEEE Electron Dev Lett 26 2005 435 437
8. O. Ambacher, B. Foutz, J. Smart, J.R. Shealy, N.G. Weimann, and K. Chu Two-dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures J Appl Phys 87 2000 334 344
9. I.P. Smorchkova, C.R. Elsass, J.P. Ibbetson, R. Vetury, B. Heying, and P. Fini Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy J Appl Phys 86 1999 4520 4526
10. S.R. Bahl, and J.A. del Alamo A new drain-current injection technique for the measurement of the off-state breakdown voltage IEEE Trans Electron Dev 40 1993 1558 1560
11. P. Valizadeh, and D. Pavlidis Effects of RF and DC stress on AlGaN/GaN MODFETs: A low frequency noise-based investigation IEEE Trans Dev Mater Reliab 5 2005 3
12. R. Vetury, N.Q. Zhang, S. Keller, and U.K. Mishra The impact of surface states on the DC and RF characterization of AlGaN/GaN HFETS IEEE Trans Electron Dev 48 2001 560 566
13. G. Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, and M. Asif Khan Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field effect transistors Appl Phys Lett 79 2001 2651 2653
14. H. Leirer, A. Vescan, R. Dietrich, A. Wieszt, and H.H. Sledzik RF characterization and transit behavior of AlGaN/GaN power HFETS IEICE Trans Electron E84-C 2001 1442 1447
15. D.C. Murray, J.C. Carter, A.G.R. Evans, J.L. Altrip, and A. Gougam The effect of RTA on CMOS devices Semicond Sci Tech 5 1990 759 764
16. Roughani B, Ramabadran U, Phillips D, Mitchel WC, Nelson CL. Chemical-mechanical polishing and rapid thermal annealing of SiC Raman spectroscopy and ESCA (XPS) studies. Mater Res Soc Symp 2001;H5.40.1:6.