A room temperature HEMT process for AlGaN/GaN heterostructure characterization

Semiconductor Science and Technology

Volumn 24, Issue 4, 2009, Pages

  Fagerlind, M ^a   Zirath, H ^a   Rorsman, N ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROSTRUCTURES; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CONDUCTIVE PAINTS; ELECTRON SHEETS; MATERIAL CHARACTERIZATIONS; QUALITY PROBLEMS; ROOM TEMPERATURE; SCHOTTKY CONTACTS; SPECIFIC CONTACT RESISTIVITY; THERMAL PROCESSINGS;

CARRIER CONCENTRATION; ELECTRIC CONTACTORS; ELECTRON MOBILITY; FABRICATION; GALLIUM; GALLIUM NITRIDE; LEAKAGE CURRENTS; OHMIC CONTACTS; PROCESS MONITORING; SILVER;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 68849124397     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/4/045014     Document Type: Article

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