Fabrication and performance of AlGaN/GaN HEMTs on (111) Si substrates

Physica Status Solidi (A) Applied Research

Volumn 194, Issue 2 SPEC., 2002, Pages 472-475

  Javorka, P ^a   Alam, A ^b   Marso, M ^a   Wolter, M ^a   Fox, A ^a   Heuken, M ^b   Kordos P ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; PRESSURE EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SILICON; SUBSTRATES; THERMAL EFFECTS; TRANSCONDUCTANCE;

ALUMINUM GALLIUM NITRIDE; PARASITIC CONDUCTION; SATURATION CURRENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036960453     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200212)194:2<472::AID-PSSA472>3.0.CO;2-F     Document Type: Article

References (6)

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