Persistent photoconductivity and carrier transport in AlGaNGaN heterostructures treated by fluorine plasma

Applied Physics Letters

Volumn 92, Issue 8, 2008, Pages

  Li, B K ^a   Ge, W K ^a   Wang, J N ^a   Chen, K J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ELECTRON GAS; FLUORINE; HIGH ELECTRON MOBILITY TRANSISTORS; PHOTOCONDUCTIVITY; TWO DIMENSIONAL;

ENHANCEMENT MODE; F-RELATED CENTERS; PLASMA TREATMENT;

HETEROJUNCTIONS;

EID: 40049101995     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2888743     Document Type: Article

References (12)

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