Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaNGaN heterostructures

Applied Physics Letters

Volumn 91, Issue 17, 2007, Pages

  Zhao, Jianzhi ^a   Lin, Zhaojun ^a   Corrigan, Timothy D ^a   Wang, Zhen ^a   You, Zhidong ^a   Wang, Zhanguo ^b  

^a SHANDONG UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRON SCATTERING; FIELD EFFECT TRANSISTORS; GRAPH THEORY; HETEROJUNCTIONS; VOLTAGE CONTROL;

BARRIER LAYERS; GATE BIAS; POLARIZATION COULOMB FIELD SCATTERING; STRAIN VARIATIONS;

ELECTRON MOBILITY;

EID: 35548950891     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2798500     Document Type: Article

References (9)

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