Investigations of GaN surface quantum well in AlGaN/GaN transistor heterostructures by contactless electroreflectance spectroscopy

Applied Physics Letters

Volumn 89, Issue 23, 2006, Pages

  Motyka, M ^a   Syperek, M ^a   Kudrawiec, R ^a   Misiewicz, J ^a   Rudzinski M ^b   Hageman, P R ^b   Larsen, P K ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON SPECTROSCOPY; ENERGY GAP; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; LIGHT TRANSMISSION; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMAL EFFECTS;

BAND GAP ENERGY; CONTACTLESS ELECTROREFLECTANCE (CER) SPECTROSCOPY; OPTICAL TRANSITION; SURFACE QUANTUM WELL;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33845419077     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2399372     Document Type: Article

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