Characterization of traps in AlGaN/GaN HEMTs with a combined large signal network analyzer/deep level optical spectrometer system

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2009, Pages 1209-1212

  Yang, Chieh Kai ^a   Roblin, Patrick ^a   Malonis, Andrew ^a   Arehart, Aaron ^a   Ringel, Steven ^a   Poblenz, Christiane ^b   Pei, Yi ^b   Speck, James ^b   Mishra, Umesh ^b  

^a OHIO STATE UNIVERSITY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Amplifier distortion; Charge carrier processes; Current; MODFETs; Optical spectroscopy

Indexed keywords

ALGAN/GAN HEMTS; AMPLIFIER DISTORTION; CHARGE CARRIER PROCESS; CHARGE CARRIER PROCESSES; DEEP LEVEL OPTICAL SPECTROSCOPY; DRAIN CONDUCTANCE; DRAIN RESISTANCES; LARGE-SIGNALS; OPTICAL SPECTROMETERS; OPTICAL SPECTROSCOPY; OPTICAL TRANSIENT; PHOTON ENERGY; RF CHARACTERISTICS; RF PERFORMANCE; S-PARAMETERS; SMALL SIGNAL; TIME EVOLUTIONS; TRANSIENT MEASUREMENT; TRAPPING CENTERS;

CHARGE CARRIERS; GALLIUM NITRIDE; INSULATING MATERIALS; MICROWAVES; MODFETS; PASSIVATION; SCATTERING PARAMETERS; SILICON NITRIDE; TRANSIENT ANALYSIS;

DRAIN CURRENT;

EID: 77949968527     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2009.5165920     Document Type: Conference Paper

References (7)

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