Persistent photoconductivity in a two-dimensional electron gas system formed by an AlGaN/GaN heterostructure

Journal of Applied Physics

Volumn 82, Issue 3, 1997, Pages 1227-1230

  Li, J Z ^a   Lin, J Y ^a   Jiang, H X ^a   Asif Khan, M ^b   Chen, Q ^b  

^a KANSAS STATE UNIVERSITY   (United States)

^b APA Optronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL IMPURITIES; ELECTRONS; ELECTROOPTICAL EFFECTS; GASES; HETEROJUNCTIONS; PHOTOCONDUCTIVITY; PHOTOIONIZATION; PHOTOSENSITIVITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

PERSISTENT PHOTOCONDUCTIVITY; TWO DIMENSIONAL ELECTRON GAS SYSTEM;

SEMICONDUCTOR DEVICES;

EID: 0031206666     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365893     Document Type: Article

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