An AlGaN/GaN HEMT-based microstrip MMIC process for advanced transceiver design

IEEE Transactions on Microwave Theory and Techniques

Volumn 56, Issue 8, 2008, Pages 1827-1833

  Südow, Mattias ^a   Fagerlind, Martin ^a   Thorsell, Mattias ^a   Andersson, Kristoffer ^a   Billström, Niklas ^b   Nilsson, Per Åke ^a   Rorsman, Niklas ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b SAAB AB   (Sweden)

Author keywords

Amplifier; Gallium nitride (GaN); Mixer; Monolithic microwave integrated circuit (MMIC); Switch

Indexed keywords

GALLIUM NITRIDE; MICROWAVE CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; TECHNOLOGY; TRANSCEIVERS;

ALGAN/GAN; ALGAN/GAN HEMT; AMPLIFIER; GALLIUM NITRIDE (GAN); LOW-NOISE DESIGNS; MICRO STRIPS; MICROSTRIP TECHNOLOGIES; MIXER; MODEL LIBRARIES; MONOLITHIC MICROWAVE INTEGRATED CIRCUIT (MMIC); PASSIVE ELEMENTS; POWER DENSITIES; SWITCH; TRANSCEIVER DESIGNS;

PROCESS ENGINEERING;

EID: 49249113033     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2008.927317     Document Type: Article

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