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Volumn 51, Issue 2 PART 2, 2012, Pages

Characterization of oxide tarps in 28nm p-type metal-oxide-semiconductor field-effect transistors with tip-shaped SiGe source/drain based on random telegraph noise

(8) Wang, Bo Chin a Wu, San Lein b Huang, Chien Wei b Lu, Yu Ying b Chang, Shoou Jinn a Lin, Yu Min c Lee, Kun Hsien c Cheng, Osbert c

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b CHENG SHIU UNIVERSITY (Taiwan)

c UNITED MICROELECTRONICS CORPORATION (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRAIN; CONTROL DEVICE; METAL-OXIDE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; P-MOSFETS; P-TYPE; RANDOM TELEGRAPH NOISE; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; SIGE SOURCE/DRAIN; SOURCE/DRAIN REGIONS; TRAP BEHAVIOR; TRAP ENERGY LEVELS;

ACTIVATION ENERGY; MOSFET DEVICES; SILICON COMPOUNDS;

SILICON ALLOYS;

EID: 84863160246 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.51.02BC11 Document Type: Article

Times cited : (14)

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