Traps centers impact on Silicon nanocrystal memories given by Random Telegraph Signal and low frequency noise

Solid-State Electronics

Volumn 56, Issue 1, 2011, Pages 1-7

  Trabelsi, M ^a,b   Militaru, L ^a   Sghaier, N ^b   Souifi, A ^a   Yacoubi, N ^b  

^a UNIVERSITÉ DE LYON   (France)

^b Institut Preparatoire aux Etudes d'Ingenieurs de Nabeul   (Tunisia)

Author keywords

Low frequency noise; Non volatile memories; RTS noise; Traps

Indexed keywords

NANOCRYSTALS; SEMICONDUCTOR STORAGE; SILICA; SILICON; SILICON OXIDES; SPURIOUS SIGNAL NOISE; TELEGRAPH;

LOW-FREQUENCY NOISE; NON-VOLATILE MEMORY; RANDOM TELEGRAPH SIGNALS; RTS NOISE; SILICON NANOCRYSTAL MEMORY; SILICON NANOCRYSTALS; SPATIAL LOCALIZATION; TRAPS;

DRAIN CURRENT;

EID: 78751645712     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.11.017     Document Type: Review

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