SCOPUS 정보 검색 플랫폼

Volumn 97, Issue 12, 2010, Pages

Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors

(6) Kuo, Cheng Wen a Wu, San Lein b Chang, Shoou Jinn a Huang, Yao Tsung a,c Cheng, Yao Chin c Cheng, Osbert c

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b CHENG SHIU UNIVERSITY (Taiwan)

c UNITED MICROELECTRONICS CORPORATION (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; ATTENUATION LENGTHS; COULOMB SCATTERING; LOW FREQUENCY; LOW-FREQUENCY NOISE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; METAL-OXIDE-SEMICONDUCTOR TRANSISTOR; N-CHANNEL; SHORT-CHANNEL DEVICES; UNIFIED MODEL;

DIELECTRIC DEVICES; LOW PASS FILTERS; MOSFET DEVICES; TENSILE STRAIN;

FIELD EFFECT TRANSISTORS;

EID: 77957121358 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3491211 Document Type: Article

Times cited : (11)

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