Study of gate oxide/channel interface properties of SON MOSFETs by random telegraph signal and low frequency noise

IEEE Transactions on Nanotechnology

Volumn 10, Issue 3, 2011, Pages 402-408

  Trabelsi, M'Hamed ^a   Militaru, Liviu ^b   Sghaier, Nabil ^a   Savio, Andrea ^b   Monfray, Stephane ^c   Souifi, Abdelkader ^b  

^a Institut Preparatoire aux Etudes d'Ingenieurs de Nabeul   (Tunisia)

^b UNIVERSITÉ DE LYON   (France)

^c STMICROELECTRONICS   (France)

Author keywords

Individual trap; low frequency noise; random telegraph signal (RTS) noise; silicon on nothing (SON) technology; submicron SON MOS; trapping detrapping

Indexed keywords

INDIVIDUAL TRAP; LOW-FREQUENCY NOISE; RANDOM TELEGRAPH SIGNAL NOISE; SILICON ON NOTHING (SON) TECHNOLOGY; SUBMICRON; TRAPPING/DETRAPPING;

ACTIVATION ANALYSIS; ACTIVATION ENERGY; DRAIN CURRENT; HAFNIUM OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; TELEGRAPH; THERMAL NOISE; TIME DOMAIN ANALYSIS; TRANSISTOR TRANSISTOR LOGIC CIRCUITS;

MOSFET DEVICES;

EID: 79955882484     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2010.2043112     Document Type: Article

References (18)

1. M. J. Kriton and M. J. Uren, "Noise in solid-state microstructure: Mi-crostructure: A new perspective on individual defects interface states and low frequency noise," Adv. Phys., vol. 38, no. 4, pp. 367-468, 1989.
2. M.O.Andersson,Z.Xiao, S.Norrman, and O. Engström,"Model based on trap assisted tunneling for tow-Level current fluctuation insubmicrometer metal-silicon-dioxide-silicon dioxide," Phys. Rev. B, vol. 41, no. 14, pp. 9836-9836, 1990.
3. A. Avella, D. Schroeder, and W. Krautschneider, "Modeling random telegraph signalsinthe gate currentofmetal-oxide-semiconductorfield effect transistors after oxide breakdown," Appl. Phys., vol. 94, no. 1, pp. 703-708, 2003.
4. C. Leyris, J.-C. Vildeuil, F. Roy, F. Martinez, M. Valenza, and A. Hoffmann, "Response of correlated double sampling CMOS imager circuit to random telegraph signal noise," in presented at the 6th Int. Caribbean Conf. Devices, Circuits Syst., Hldyd Ufi Camen, Mexico, Apr. 26-28, 2006.
5. A. L. McWhorter, R. H. Kingston Semiconductor Surface Physics. Philadelphia, PA: Univ. Pennsylvania, 1957, p. 207.
6. F. N. Hooge, "1/f noise sources," IEEE Trans. Electron Devices, vol. 41, pp. 1926-1935, 1994.
7. K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, "A physics-Based MOSFET noise model for circuit simulators," IEEE Trans. Electron Devices, vol. 37, no. 5, pp. 1323-1333, May 1990. (Pubitemid 20713700)
8. en, M. Jurczak, T. Skotnick, M. Paloli, B. Torm, J. Martins, J. L. Regolini, D. Dutartre, P. Ribot, D. Lenoble, R. Pantel, and S. Monfray, "Silicon on nothing (SON) an innovative process for advanced CMOS," IEE Trans. Electron Devices, vol. 47, no. 11, pp. 2179-2187, 2000.
9. R. dit Buisson in INP Grenoble, 1993, PhD thesis.
10. G. Ghibaudo, "Low frequency noise in advanced CMOS devices," Recent Res. Devel. Appl. Phys., vol. 6, pp. 193-209, 2003.
11. M. Jevtić, "Low-frequency noise diagnostic of microelectronic devices," in presented at the 20th Int. Conf. Microelectron. (MIEL), vol. 1, NIS, Serbia, 12-14, Sep. 1995.
12. A. P. Van Der Wel, E. M. Klumperink, L. K. J. Vandamme, and B. Nauta, "Modeling random telegraph noise under switched bias conditions using cyclostationary RTS noise," IEEE Trans. Electron Devices, vol. 50, no. 5, pp. 1378-1384, May 2003.
13. N. B. Lukyanchikova, M. V. Petrichuk, and N. P. Garbar, "Asymmetry of the RTS's capture and emission kinetics in nMOSFET processed in a 0.35ìm CMOS technology," in Proc. 14th Int. Conf. Noise Phys. Syst 1/f fluctuations (ICNF), Leuven, Belgium, 1997, pp. 232-235.
14. Z. Shi, J. Miéville, and M. Dutoit, "Random telegraph signals in deep submicron nMOSFET's," IEEE Trans. Electron Devices, vol. 41, no. 7, pp. 1161-1168, Jul. 1994.
15. P. J. McWorther and P. S. Winokur, "Simple technique for separating the effects of interface traps and trapped oxide charge in metal-oxide- semiconductor transistors," Appl. Phys. Lett., vol. 48, p. 133, 1986.
16. 2 /Si interface properties of SON MOSFETs by random telegraph signal and charge pumping measurements," Solid-State Electron., vol. 52, pp. 44-48, 2007. (Pubitemid 350138063)
17. E. Simoens and C. Clays, "Random telegraph signal: A local probe for single point defects studies in solid-states devices," Mater. Sci. Eng., vol. B91-92, pp. 136-143, 2002.
18. K. S. Ralls, W. J. Skocpol, L. D. Jackel, R. E. Howard, L. A. Fetter, R. W. Epworth, and D. M. Tennant, "Discrete Resistance Switching in submicrometer silicon inversion layers: Individual interface traps and low frequency (1/f) noise," Phys. Rev. Lett., vol. 52, no. 3, pp. 228-231, 1984.