Impact of ge content on flicker noise behavior of strained-SiGe p-type metal-oxide-semiconductor field-effect transistors

Japanese Journal of Applied Physics

Volumn 48, Issue 4 PART 2, 2009, Pages

  Wu, San Lein ^a   Wu, Chung Yi ^a   Lin, Hau Yu ^b   Kuo, Cheng Wen ^b   Chen, Shin Hsin ^b   Lin, Chung Hsiung ^a   Chang, Shoou Jinn ^b  

^a CHENG SHIU UNIVERSITY   (Taiwan)

^b Center for Micro/Nano Science and Technology   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BURIED CHANNELS; CARRIER NUMBER FLUCTUATION; CONTROL DEVICE; DC CHARACTERISTICS; FLICKER NOISE; GE CONCENTRATIONS; GE CONTENT; INTERFACE SCATTERING; LOW FREQUENCY; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOBILITY FLUCTUATIONS; NOISE BEHAVIOR; NOISE MECHANISMS; NUMBER FLUCTUATIONS; P-MOSFETS; P-TYPE; SIGE CHANNELS; STRAINED SIGE; STRAINED-SI;

CONTROL; DIELECTRIC DEVICES; FIELD EFFECT TRANSISTORS; GERMANIUM; HOLE MOBILITY; ION BEAMS; MOSFET DEVICES; SEMICONDUCTING SILICON; SILICON ALLOYS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77952540720     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.04C036     Document Type: Article

References (13)

1. Y. M. Lin, S. L. Wu, S. J. Chang, P. S. Chen, and C. W. Liu: Jpn. J. Appl. Phys. 45 (2006) 4006.
2. C. H. Lee, S. L. Wu, and S. J. Chang: Semicond. Sci. Technol. 19 (2004) 1053.
3. S. Verdonckt-Vandebroek, E. F. Crabbé, B. S. Meyerson, D. L. Harame, P. J. Restle, J. M. C. Stork, and J. B. Johnson: IEEE Trans. Electron Devices 41 (1994) 90.
4. M. J. Prest, M. J. Palmer, G. Braithwaite, T. J. Grasby, P. J. Phillips, O. A. Mironov, E. H. C. Parker, and T. E. Whall: Proc. ESSDERC, 2001, p. 179.
5. T. Tsuchiya, T. Matsuura, and J. Murota: Jpn. J. Appl. Phys. 40 (2001) 5290.
6. M. von Haartman, A.-C. Lindgren, P.-E. Hellström, B. G. Malm, S.-L. Zhang, and M. Östling: IEEE Trans. Electron Devices 50 (2003) 2513.
7. G. K. Dalapati: IEEE Trans. Electron Devices 53 (2006) 1142.
8. K. Terada and H. Muta: Jpn. J. Appl. Phys. 18 (1979) 953.
9. J. G. J. Chern, P. Chang, R. F. Motta, and N. Godinho: IEEE Electron Device Lett. 1 (1980) 170.
10. D. K. Schroder: Semiconductor Material and Device Characterization (Wiley, New York, 2006) 3rd ed., p. 225.
11. Y. A. Allogo, M. Marin, M. D. Murcia, P. Llinares, and D. Cottin: Solid-State Electron. 46 (2002) 977.
12. G. Ghibaudo and T. Boutchacha: Microelectron. Reliab. 42 (2002) 573.
13. K. K. Hung, P. K. Ko, and C. Hu: IEEE Trans. Electron Devices 37 (1990) 654.