Study of SiO2/Si interface properties of SON MOSFETs by random telegraph signal and charge pumping measurements

Solid-State Electronics

Volumn 52, Issue 1, 2008, Pages 44-48

  Ferraton, S ^a,b   Militaru, L ^a   Souifi, A ^a   Monfray, S ^c   Skotnicki, T ^c  

^a UNIVERSITÉ DE LYON   (France)

^b NXP SEMICONDUCTORS   (France)

^c STMICROELECTRONICS   (France)

Author keywords

Charge pumping; Deep submicron MOS; Single trap; SON technology

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CHARGE; GATE DIELECTRICS; INTERFACES (MATERIALS); SILICON COMPOUNDS; STATIC RANDOM ACCESS STORAGE;

CHARGE PUMPING; DEEP-SUBMICRON MOS; SINGLE TRAP; SON TECHNOLOGY;

MOSFET DEVICES;

EID: 36248993442     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.07.024     Document Type: Article

References (6)

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