Channel-width dependence of low-frequency noise in process tensile-strained n -channel metal-oxide-semiconductor transistors

Applied Physics Letters

Volumn 88, Issue 6, 2006, Pages

  Lu, Ming Pei ^a   Lee, Wen Chin ^b   Chen, Ming Jer ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD-EFFECT TRANSISTORS YIELDS; LATTICE MISMATCH;

FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); MOS DEVICES;

SPURIOUS SIGNAL NOISE;

EID: 32444434791     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2172287     Document Type: Review

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