Impact of uniaxial strain on low-frequency noise in nanoscale PMOSFETs

IEEE Electron Device Letters

Volumn 30, Issue 6, 2009, Pages 672-674

  Kuo, Jack J Y ^a   Chen, William P N ^a   Su, Pin ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Interface state; Low frequency noise; Process induced strain; Trap density; Tunneling attenuation length; Uniaxial strained PMOSFET

Indexed keywords

INTERFACE STATE; LOW-FREQUENCY NOISE; PROCESS-INDUCED STRAIN; TRAP DENSITY; TUNNELING ATTENUATION LENGTH; UNIAXIAL STRAINED PMOSFET;

GATE DIELECTRICS; GATES (TRANSISTOR); THERMAL NOISE; TUNNELING (EXCAVATION);

MOSFET DEVICES;

EID: 67649385959     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2020069     Document Type: Article

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