Impacts of notched-gate structure on contact etch stop layer (CESL) stressed 90-nm nMOSFET

IEEE Electron Device Letters

Volumn 28, Issue 5, 2007, Pages 376-378

  Lin, Chien Ting ^a   Fang, Yean Kuen ^a   Yeh, Wen Kuan ^b   Lai, Chieh Ming ^a   Hsu, Che Hua ^c   Cheng, Li Wei ^c   Ma, Guang Hwa ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^c UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

Contact etch stop layer (CESL) stresses; Mobility enhancement; Notched gate; Stress engineering

Indexed keywords

COMPUTER AIDED ANALYSIS; ETCHING; GATE DIELECTRICS; TENSILE STRESS;

CONTACT ETCH STOP LAYER (CESL) STRESSES; MOBILITY ENHANCEMENT; NOTCHED GATE; STRESS ENGINEERING;

MOSFET DEVICES;

EID: 34247595525     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.895425     Document Type: Article

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