Investigation of interface characteristics in strained-Si nMOSFETs

Solid-State Electronics

Volumn 53, Issue 8, 2009, Pages 897-900

  Kuo, Cheng Wen ^a   Wu, San Lein ^b   Chang, Shoou Jinn ^a   Lin, Hau Yu ^a   Wang, Yen Ping ^c   Hung, Shang Chao ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHENG SHIU UNIVERSITY   (Taiwan)

^c VANUNG UNIVERSITY   (Taiwan)

^d SHIH CHIEN UNIVERSITY   (Taiwan)

Author keywords

1 f noise; Strained Si; Unified model

Indexed keywords

1/F NOISE; CAP LAYERS; CAPACITANCE VOLTAGE MEASUREMENTS; CARRIER NUMBER FLUCTUATION; CORRELATED MOBILITY FLUCTUATIONS; INTERFACE CHARACTERISTIC; LOW-FREQUENCY NOISE; MOBILITY FLUCTUATIONS; NMOSFET; NMOSFETS; OUT-DIFFUSION; SIGE VIRTUAL SUBSTRATES; STRAINED-SI; STRONG INVERSION; TRANSPORT MECHANISM; UNIFIED MODEL; WEAK INVERSIONS;

FIELD EFFECT TRANSISTORS; GERMANIUM; MOSFET DEVICES; SILICON;

CARRIER MOBILITY;

EID: 67649343930     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.04.035     Document Type: Article

References (14)

1. Takagi S., Mizuno T., Tezuka T., Sugiyama N., Numata T., Usuda K., et al. Channel structure design, fabrication and carrier transport properties of strained-Si/SiGe-on-insulator (strained-SOI) MOSFET. IEDM Tech Dig (2003) 57-60
2. Wu S.L., Wang Y.P., and Chang S.J. Controlled misfit dislocation technology in strained silicon MOSFETs. Semicond Sci Technol 21 (2006) 44-47
3. Hua W.C., Lee M.H., Chen P.S., Maikap S., and Liu C.W. Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs. IEEE Electron Dev Lett 25 (2004) 693-695
4. Hua W.C., Lee M.H., Chen P.S., Tsai M.J., and Liu C.W. Threading dislocation induced low frequency noise in strained-Si nMOSFETs. IEEE Electron Dev Lett 26 (2005) 667-669
5. Fobelets K., Rumyantsev S.L., Shur M.S., and Olsen S.H. Influence of the Ge concentration in the virtual substrate on the low frequency noise in strained-Si surface n-channel metal-oxide-semiconductor field-effect transistors. J Appl Phys 103 (2008) 044501
6. Simoen E., Eneman G., Verheyen P., Delhougne R., Loo R., De Meyer K., et al. On the beneficial impact of tensile-strained silicon substrates on the low-frequency noise of n-channel metal-oxide-semiconductor transistors. Appl Phys Lett 86 (2005) 223509
7. Lu M.P., Lee W.C., and Chen M.J. Channel-width dependence of low-frequency noise in process tensile-strained n-channel metal-oxide-semiconductor transistors. Appl Phys Lett 88 (2006) 063511
8. Hill W.A., and Coleman C.C. A single frequency approximation for interface-state density determination. Solid-State Electron 23 (1980) 987
9. McWhorter A.L. Semiconductor surface physics. In: Kinston R.H. (Ed) (1957), Univ. Pennsylvania Press, Philadelphia (PA)
10. b-generation-stress relationship. Phys Rev B 48 (1993) 2418-2435
11. Stesmans A., and Afanas'ev V.V. Thermally induced interface degradation in (1 1 1) Si/SiO2 traced by electron spin resonance. Phys Rev B 54 (1996) R11129
12. b interface defects. Appl Phys Lett 82 (2003) 3038
13. 2 entities probed by electron spin resonance. Appl Phys Lett 89 (2006) 152103
14. Ghibaudo G., and Boutchacha T. Electrical noise and RTS fluctuations in advanced CMOS devices. Microelectron Reliab 42 (2002) 573-582