On the enhanced impact ionization in uniaxial strained p-MOSFETs

IEEE Electron Device Letters

Volumn 28, Issue 7, 2007, Pages 649-651

  Su, Pin ^a   Kuo, Jack J Y ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Hot carrier effect; Impact ionization; Strained silicon; Substrate current

Indexed keywords

HOT-CARRIER EFFECT; PINCH-OFF VOLTAGE; SUBSTRATE CURRENT;

ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRON MOBILITY; HOT CARRIERS; IMPACT IONIZATION; STRAIN; SUBSTRATES;

MOSFET DEVICES;

EID: 34447254560     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.900297     Document Type: Article

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