A comprehensive investigation of analog performance for uniaxial strained PMOSFETs

IEEE Transactions on Electron Devices

Volumn 56, Issue 2, 2009, Pages 284-290

  Kuo, Jack Jyun Yan ^a   Chen, William Po Nien ^a   Su, Pin ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

CMOS; DC gain; Device mismatch; Linearity; Low frequency noise; Process induced strain; Transconductance to drain current ratio; Uniaxial strained PMOSFET

Indexed keywords

CARRIER MOBILITY; LINEARIZATION; MOS DEVICES; MOSFET DEVICES; THERMAL NOISE; TRANSCONDUCTANCE;

CMOS; DC GAIN; DEVICE MISMATCH; LINEARITY; LOW-FREQUENCY NOISE; PROCESS-INDUCED STRAIN; TRANSCONDUCTANCE TO DRAIN-CURRENT RATIO; UNIAXIAL STRAINED PMOSFET;

DRAIN CURRENT;

EID: 59849101588     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2010590     Document Type: Article

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