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Volumn 111, Issue 1, 2012, Pages

A comprehensive study on the leakage current mechanisms of Pt/SrTiO 3/Pt capacitor

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; COMPREHENSIVE STUDIES; CROSSOVER POINTS; CURRENT CHARACTERISTIC; CURRENT MECHANISMS; DEVICE PARAMETERS; HIGH FIELD; HIGHLY SENSITIVE; MIM CAPACITORS; NEGATIVE VOLTAGE; POSITIVE CURRENT; SHARP INCREASE; SRTIO; THERMIONIC FIELD EMISSION; TUNNELING PHENOMENA;

EID: 84862923303     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3673574     Document Type: Article
Times cited : (52)

References (32)
  • 6
    • 33745266437 scopus 로고    scopus 로고
    • 3 thin films revisited: The case of chemical vapor deposited films on Pt electrodes
    • DOI 10.1063/1.2202115
    • E. Peter and T. Reji, J. Appl. Phys. 99, 114108 (2006). 10.1063/1.2202115 (Pubitemid 43926513)
    • (2006) Journal of Applied Physics , vol.99 , Issue.11 , pp. 114108
    • Ehrhart, P.1    Thomas, R.2
  • 32
    • 34250658118 scopus 로고    scopus 로고
    • Localized switching mechanism in resistive switching of atomic-layer-deposited Ti O2 thin films
    • DOI 10.1063/1.2748312
    • K. M. Kim, B. J. Choi, and C. S. Hwang, Appl. Phys. Lett. 90, 242906 (2007). 10.1063/1.2748312 (Pubitemid 46934800)
    • (2007) Applied Physics Letters , vol.90 , Issue.24 , pp. 242906
    • Kim, K.M.1    Choi, B.J.2    Hwang, C.S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.