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Journal of Applied Physics

Volumn 110, Issue 3, 2011, Pages

Mobility of oxygen vacancy in SrTiO3 and its implications for oxygen-migration-based resistance switching

(6) Jiang, W a Noman, M a Lu, Y M a Bain, J A a Salvador, P A a Skowronski, M a

a CARNEGIE MELLON UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED BIAS; CAPACITANCE VOLTAGE CHARACTERISTIC; DRIFTDIFFUSION EQUATIONS; HIGH QUALITY; ORDERS OF MAGNITUDE; RESISTANCE SWITCHING; ROOM TEMPERATURE; SCHOTTKY DIODES; SRTIO; TIME EVOLUTIONS; VACANCY MOBILITY;

COMPUTER SIMULATION; DIFFRACTIVE OPTICS; ELECTRIC FIELDS; OXYGEN; PARTIAL DIFFERENTIAL EQUATIONS; PLATINUM; SCHOTTKY BARRIER DIODES; SINGLE CRYSTALS; STRONTIUM ALLOYS; STRONTIUM TITANATES; THIN FILM DEVICES;

OXYGEN VACANCIES;

EID: 80051949182 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3622623 Document Type: Article

Times cited : (98)

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