Implication of oxygen vacancies on current conduction mechanisms in TiN/Zr1-xAlxO2/TiN metal-insulator-metal structures

Journal of Applied Physics

Volumn 109, Issue 7, 2011, Pages

  Paskaleva, A ^a   Lemberger, M ^b   Bauer, A J ^b   Frey, L ^b,c  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED OXYGEN VACANCIES; CONDUCTION MECHANISM; CURRENT TRANSPORT; GATE INTERFACE; METAL-INSULATOR-METAL STRUCTURES; ON CURRENTS; TEMPERATURE RANGE;

METAL INSULATOR BOUNDARIES; MOS DEVICES; OXYGEN; TITANIUM NITRIDE;

OXYGEN VACANCIES;

EID: 79955435702     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3565056     Document Type: Conference Paper

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