FeRAM technology for high density applications

Microelectronics Reliability

Volumn 41, Issue 7, 2001, Pages 947-950

  Mikolajick, T ^a   Dehm, C ^a   Hartner, W ^a   Kasko, I ^a   Kastner, M J ^a   Nagel, N ^a   Moert, M ^a   Mazure, C ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC MATERIALS; METALLIZING; MICROELECTRODES; STRONTIUM COMPOUNDS;

FERROELECTRIC RANDOM ACCESS MEMORIES(FERAM);

RANDOM ACCESS STORAGE;

EID: 0035394951     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00049-X     Document Type: Article

References (8)