Conduction mechanism of leakage current due to the traps in ZrO2 thin film

Semiconductor Science and Technology

Volumn 24, Issue 11, 2009, Pages

  Seo, Yohan ^a   Lee, Sangyouk ^a   An, Ilsin ^a   Song, Chulgi ^b   Jeong, Heejun ^a  

^a Hanyang University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHILD'S LAW; CONDUCTION MECHANISM; CURRENT VOLTAGE CURVE; DOMINANT MECHANISM; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; NEGATIVE BIAS; SPACE CHARGE LIMITED CONDUCTION; TEMPERATURE DEPENDENCE OF CURRENT; TRAP ASSISTED TUNNELING; TRAP BARRIERS; TRAPPING LEVELS; ZIRCONIUM OXIDE;

ATOMIC LAYER DEPOSITION; ELECTRIC FIELDS; GATE DIELECTRICS; GATES (TRANSISTOR); MOS CAPACITORS; THIN FILM DEVICES; THIN FILMS; TUNNELING (EXCAVATION); WIND TUNNELS; ZIRCONIA; ZIRCONIUM; ZIRCONIUM ALLOYS;

ACTIVATION ENERGY;

EID: 70450202933     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/11/115016     Document Type: Article

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