SIC power diodes improvement by fine surface polishing

Materials Research Society Symposium Proceedings

Volumn 815, Issue , 2004, Pages 273-278

  Godignon, P ^a   Perez, R ^a,c   Tournier, D ^a   Mestres, N ^c   Mank, H ^b   Turover, D ^b  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b SAVOIE TECHNOLAC   (France)

^c INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; ELECTRIC BREAKDOWN; HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; MICROELECTRONICS; POLISHING; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES; SURFACE ROUGHNESS; THICKNESS CONTROL;

CRYSTAL DAMAGE RECOVERY; FINE POLISHING; ROOM TEMPERATURE;

SILICON CARBIDE;

EID: 12744281521     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-815-j5.12     Document Type: Conference Paper

References (9)

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