Defect-driven inhomogeneities in Ni4H-SiC Schottky barriers

Applied Physics Letters

Volumn 87, Issue 24, 2005, Pages 1-3

  Tumakha, S ^a   Ewing, D J ^b   Porter, L M ^b   Wahab, Q ^c   Ma, X ^d   Sudharshan, T S ^e   Brillson, L J ^a  

^a Ohio State University   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

^c LINKÖPING UNIVERSITY   (Sweden)

^d MaxMile Technologies LLC   (United States)

^e University of South Carolina   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT LEVELS; ELECTRICAL TRANSPORT; INHOMOGENEITIES; SUBMICRON SCALE;

CATHODOLUMINESCENCE; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; NICKEL; SCHOTTKY BARRIER DIODES; SPECTROSCOPIC ANALYSIS;

SILICON CARBIDE;

EID: 28944432136     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2141719     Document Type: Article

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