Impact of fine surface Chemical-Mechanical Polishing on the manufacturing yield of 1200V SiC Schottky Barrier Diodes

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2005, Pages 239-242

  Tournier, D ^a   Perez Tomas A ^a   Godignon, P ^a   Millan J ^a   Mank, H ^b   Turover, D ^b   Hinchley, D ^c   Rhodes, J ^c  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b SAVOIE TECHNOLAC   (France)

^c AB Mikroelektronik GmbH   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 27744575885     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Data sheets available online at: http://www.cree.com.
2. D. Nakamura, I. Gunjishima, S. Yamaguchi, T. Ito, A. Okamoto, H. Kondo, S. Onda and K. Takatori, "Ultrahigh-quality silicon carbide single crystals", in Nature, vol. 430, August 2004, pp. 1009-1012.
3. P. Godignon, R. Perez, D. Toumier, N. Mestres, H. Mank and D. Turover, "SiC Power Diodes Improvements by fine surface polishing" Mat. Res. Soc. Symp. Proc. Vol. 815, pp 273-278