Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination

IEEE Electron Device Letters

Volumn 17, Issue 3, 1996, Pages 139-141

  Itoh, Akira ^b   Kimoto, Tsunenobu ^b   Matsunami, Hiroyuki ^a,b  

^a IEEE

^b KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC CONTACTS; HEAT TREATMENT; HIGH TEMPERATURE OPERATIONS; ION IMPLANTATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING BORON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; THERMAL EFFECTS;

BORON IMPLANTATION; EDGE TERMINATION; REVERSE BLOCKING CHARACTERISTICS; SCHOTTKY CONTACTS; SCHOTTKY RECTIFIERS; TEMPERATURE DEPENDENCE;

ELECTRIC RECTIFIERS;

EID: 0030107490     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.485193     Document Type: Article

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