Influence of epitaxial growth and substrate induced defects on the breakdown of high-voltage 4H-SiC Schottky diodes

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Wahab, Q ^a   Ellison, A ^a   Hallin, C ^a   Henry, A ^a   Di Persio, J ^b   Martinez, R ^b   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIV LILLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRIC BREAKDOWN OF SOLIDS; EPITAXIAL GROWTH; MORPHOLOGY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; X RAY ANALYSIS;

X RAY TOPOGRAPHY ANALYSIS;

SILICON CARBIDE;

EID: 18844479453     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (15)

1. M. J. Paisley, K. G. Irvine, O. Kordina, R. Singh, J. W. Palmour and C. H. Carter, Jr,. to be published in MRS Symposim, Spring meeting, San Fransisco, USA (1999).
2. Q. Wahab, A. Ellison, J. Zhang, U. Forsberg, E. Duranova, A. Henry, L. D. Madsen and E. Janzén, submitted to Int. Conf. on SiC and Related Materials, North Carolina,USA, October 10-15, 1999.
3. J. Spitz, M. R. Melloch, J. A. Cooper, Jr. and M. A. Capano, IEEE Electron Device Lett., 19, (1998) p. 100.
4. G. Augustine, N. M. Hoogbood, V. B. Krishna, G. Dunne and R. Hopkins, Phys. Stat. Sol. B, 202, (1997) p. 137.
5. W. Si, M. Dudley, J. Electron. Mat. 26, (1997) p. 151.
6. C. Hallin, F. Owman, P. Mårtensson, A. Ellison, A. Konstantinov, O. Kordina, M. Linnarsson and E. Janzén, J. Cryst. Growth 181, (1997) p. 241.
7. P. G. Neudeck and J. A. Powell, IEEE Elec. Dev. Lett. 15, (1994) p. 63.
8. S. V. Rendakova, I. P. Nikitina, A. Tregubova and V. Dimitriev, J. Electron. Mater. 27, (1998) p. 292.
9. J. W. Palmour, L. A. Lipkin, R. Singh, D. B. Salter, Jr., A. V. Suvorov and C. H. Carter Jr., Deamond Relat. Mater. 6, (1997) p. 1400.
10. T. Kimoto, N. Miyamoto and H. Matsunami, IEEE Trans. Electron Devices, 46, (1999) p. 471.
11. L. Zheng, R. P. Joshi and C. Fazi, Appl. Phys. Lett., 85, (1999) p. 7935.
12. P. G. Neudeck, W. Huang and M. Dudley, Solid State Electronics, 42, (1998) p. 2157.
13. P. G. Neudeck and C. Fazi, IEEE Trans. Electron Devices, 56, (1999) p. 485.
14. M. Dudley, W. Si, S. Wang, C. Carter jr., R. Glass and V. Tsvetkov, I Nuovo Cimento, D-19, (1997) p. 153.
15. A. G. Chynoweth and G. L. Pearson, J. Appl. Phys., 29, (1958) p. 1103.