Effects of plasma-PH 3 passivation on mobility degradation mechanisms of In 0.53Ga 0.47As nMOSFETs

IEEE Transactions on Electron Devices

Volumn 59, Issue 5, 2012, Pages 1377-1384

  Suleiman, Sumarlina Azzah Bte ^a   Oh, Hoon Jung ^b   Lee, Sungjoo ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b Yonsei University   (South Korea)

^c Sungkyunkwan University   (South Korea)

Author keywords

In 0.53Ga 0.47As metal oxide semiconductor field effect transistor; mobility degradation mechanism; plasma PH 3 passivation

Indexed keywords

AS INTERFACES; BALLISTIC TRANSPORTS; CHANNEL MOBILITY; COULOMB SCATTERING; DEVICE-SCALING; EXCHANGE REACTION; GATE LENGTH; INTERFACE DIPOLE; INTERFACIAL LAYER; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOBILITY DEGRADATION MECHANISMS; MOBILITY ENHANCEMENT; NMOSFETS; PASSIVATION LAYER; SCATTERING MECHANISMS; SOFT-OPTICAL PHONONS; SUB-100 NM; TEMPERATURE DEPENDENCE; VACANCY SITES;

DEGRADATION; ELECTRIC BREAKDOWN; GALLIUM; INVERSION LAYERS; MOSFET DEVICES; PLASMAS; SCATTERING;

PASSIVATION;

EID: 84862788579     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2187209     Document Type: Article

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