Dangling bond charge transition levels in AlAs, GaAs, and InAs

Applied Physics Letters

Volumn 97, Issue 19, 2010, Pages

  Komsa, Hannu Pekka ^a   Pasquarello, Alfredo ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; DEFECT LEVELS; GAAS; HYBRID DENSITY; II-IV SEMICONDUCTORS; IN0.53GA0.47AS; INAS; TRANSITION LEVEL;

CONDUCTION BANDS; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM ARSENIDE; INDIUM ARSENIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM;

DANGLING BONDS;

EID: 78249255219     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3515422     Document Type: Article

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