Interface states model for III-V oxide interfaces

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1558-1560

  Robertson, J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Fermi level pinning; FET; GaAs; Interface state passivation

Indexed keywords

ATOM BOND; CONDUCTION BAND EDGE; DENSITY OF INTERFACE STATE; FERMI LEVEL PINNING; FET; GAAS; GAAS-FET; GENERAL MODEL; INTERFACE STATE; INTERFACE STATE PASSIVATION; NATIVE DEFECT; OXIDE INTERFACES;

DANGLING BONDS; ELECTRON MOBILITY; FERMI LEVEL; FERMIONS; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; MESFET DEVICES; PASSIVATION;

SEMICONDUCTING GALLIUM;

EID: 67349195475     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.053     Document Type: Article

References (35)

1. Passlack M., Hong M., Mannaerts J.P., Opila R.L., Chu S.N.G., Ren F., Moriya N., and Kwo J.R. IEEE Trans. Electron Dev. 44 (1997) 214
2. Hill R.J.W., Moran D.A., Li X., Zhou H., MacIntyre D., Thomas S., Asenov A., Zurcher P., Rajagopalan K., Abrokwah J., Droopad R., Passlack M., and Thayne I.G. IEEE Electron Dev. Lett. 28 (2007) 1080
3. Datta S., Dewey G., Fastenau J.M., Kudait M.K., Loubychev D., Liu W.K., Radosavljevic M., Rachmady W., and Chau R. IEEE Electron Dev. Lett. 28 (2007) 685
4. Kim D., and Del Alamo J. International Electron Devices Meeting, Tech. Digest (2007) 629
5. Lin T.D., Chiu H.C., Chang P., Tung L.T., Chen C.P., Hong M., Kwo J., Tsai W., and Wang Y.C. Appl. Phys. Lett. 93 (2008) 033516
6. Xuan Y., Ye P.D., and Shen T. Appl. Phys. Lett. 91 (2008) 232107
7. Ye P.D., Wilk G.D., Yang B., Kwo J., Grossman H.J.L., Hong M., Ng K.K., and Bude J. Appl. Phys. Lett. 84 (2004) 434
8. Frank M.M., Wilk G.D., Starodub D., Gustafsson T., Garfunkel E., Chabal Y., Grazul J., and Muller D.A. Appl. Phys. Lett. 86 (2005) 152904
9. Hale M.J., Yi S.I., Sexton J.Z., Kummel A.C., and Passlack M. J. Chem. Phys. 119 (2003) 6719
10. Hinkle C.L., Sonnet A.M., Vogel E.M., McDonnell S., Hughes G.J., Milojevic M., Lee B., Aguirre-Tostado F.S., Choi K.J., Kim H.C., Kim J., and Wallace R.M. Appl. Phys. Lett. 92 (2008) 071901
11. Hinkle C.L., Sonnet A.M., Milojevic M., Aguirre-Tostado F.S., Kim H.C., Kim J., Wallace R.M., and Vogel E.M. Appl. Phys. Lett. 93 (2008) 113506 np
12. Passlack M., Droppad R., Fejes P., and Wang L. IEEE Electron Dev. Lett. 30 (2009) 2
13. R.M. Wallace et al., these processings.
14. Winn D.L., Hale M.J., Grassman T.J., Kummel A.C., Droppad R., and Passlack M. J. Chem. Phys. 126 (2007) 084703
15. Ye P.D. J. Vac. Sci. Technol. A 26 (2008) 697
16. Monch W. Surface Sci. 300 (1994) 928
17. Robertson J. J. Vac. Sci. Technol. B 18 (2000) 1785
18. Tersoff J. Phys. Rev. B 30 (1984) 4874
19. Spicer W.E., Lindau I., Skeath P., Su C.Y., and Chye P. Phys. Rev. Lett. 44 (1980) 420
20. J. Vac. Sci. Technol. 16 (1980) 1422
21. Chelikowsky J.R., and Cohen M.L. Phys. Rev. B 20 (1979) 4150
22. Zhu X., Zhang S.B., Louie S.G., and Cohen M.L. Phys. Rev. Lett. 63 (1989) 2112
23. Walukiewicz W. Phys. Rev. B 37 (1988) 4760
24. Northrup J.E., and Zhang S.B. Phys. Rev. Lett. 67 (1991) 2339
25. Northrup J.E., and Zhang S.B. Phys. Rev. B 50 (1994) 4962
26. Lany S., and Zunger A. Phys. Rev. B 78 (2008) 235104
27. Walukiewicz W. Physica B 302 (2001) 123
28. Zhang S.B., Wei S.H., and Zunger A. J. Appl. Phys. 83 (1998) 3192
29. Chelikowsky J.R., and Cohen M.L. Phys. Rev. B 14 (1973) 556
30. O'Reilly E.P., and Robertson J. Phys. Rev. B 34 (1984) 8684
31. Robertson J., and Falabretti B. J. Appl. Phys. 100 (2006) 014111
32. van de Walle C.G., and Neugebauer J. Nature 423 (2003) 626
33. Olsson L.O., Andersson C.B.M., Hakansson M.C., Kanaski J., Ilver L., and Karlsson U.O. Phys. Rev. Lett. 76 (1996) 3626
34. Bell G.R., Jones T.S., and McConville C.F. Appl. Phys. Lett. 71 (1997) 3688
35. Piper L.F.J., Veal T.D., Love M.J., and McConville C.P. Phys. Rev. B 73 (2006) 195321