III-V surface plasma nitridation: A challenge for III-V nitride epigrowth

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 4, 1999, Pages 2194-2201

  Losurdo, M ^a   Capezzuto, P ^a   Bruno, G ^a   Leo, G ^a   Irene, E A ^b  

^a CNR   (Italy)

^b University of North Carolina at Chapel Hill   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPPING LAYER; EX SITU; GAAS; GAAS(001); GAN LAYERS; III-V NITRIDES; IN-SITU; INHIBITION EFFECT; INP; INP SUBSTRATES; NITRIDATION DEPTH; NITRIDE FORMATION; PLASMA NITRIDATION; REAL TIME; SUBSTRATE NITRIDATION; SURFACE COMPOSITIONS; SURFACE PLASMA;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; DESORPTION; GALLIUM ARSENIDE; GALLIUM NITRIDE; NITRIDATION; PHOSPHORUS; PLASMAS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GALLIUM; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM ALLOYS;

EID: 0000129269     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581747     Document Type: Conference Paper

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