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Volumn 116, Issue 23, 2012, Pages 12525-12531

Development of crystal growth simulator based on tight-binding quantum chemical molecular dynamics method and its application to silicon chemical vapor deposition processes

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION PROCESS; ELECTRON TRANSFER DYNAMICS; SI(0 0 1); SI(001) SURFACES; SILICON THIN FILM; SURFACE HYDROGEN; TIGHT-BINDING QUANTUM CHEMICAL MOLECULAR DYNAMICS;

EID: 84862297434     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp3002542     Document Type: Article
Times cited : (14)

References (62)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.