Quantum chemical molecular dynamics simulation of the plasma etching processes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 1859-1864

  Sasata, Katsumi ^a   Yokosuka, Toshiyuki ^a   Kurokawa, Hitoshi ^a   Takami, Seiichi ^a   Kubo, Momoji ^a   Imamura, Akira ^b   Shinmura, Tadashi ^c   Kanoh, Masaaki ^c   Selvam, Parasuraman ^a,d   Miyamoto, Akira ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b HIROSHIMA KOKUSAI GAKUIN UNIVERSITY   (Japan)

^c TOSHIBA CORPORATION   (Japan)

^d INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

Accelerated quantum chemical molecular dynamics; Etching; Fluorocarbon; Plasma; SiO2

Indexed keywords

CALCULATIONS; CHEMICAL BONDS; COMPUTER SIMULATION; ELECTRON ENERGY LEVELS; FLUOROCARBONS; FREE RADICALS; HAMILTONIANS; MOLECULAR DYNAMICS; QUANTUM THEORY; SILICA;

ATOMIC BOND; BOND-BREAKING; BOND-FORMATION; QUANTUM CHEMICAL MOLECULAR DYNAMICS SIMULATION;

PLASMA ETCHING;

EID: 0037672198     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1859     Document Type: Article

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