Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms

Physical Review B - Condensed Matter and Materials Physics

Volumn 61, Issue 12, 2000, Pages 8537-8540

  Motooka, T ^a   Nisihira, K ^a   Munetoh, S ^b   Moriguchi, K ^b   Shintani, A ^b  

^a KYUSHU UNIVERSITY   (Japan)

^b Sumitomo Metal Industries Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000461035     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.61.8537     Document Type: Article

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