Kinetic Monte Carlo simulations of surface growth during plasma deposition of silicon thin films

Journal of Chemical Physics

Volumn 131, Issue 3, 2009, Pages

  Pandey, Sumeet C ^a   Singh, Tejinder ^a   Maroudas, Dimitrios ^a  

^a University of Massachusetts   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; AB INITIO; ATTENUATED TOTAL REFLECTIONS; DEPOSITION PRECURSORS; DESORPTION PROCESS; DISSOCIATION REACTIONS; EXPERIMENTAL DATA; EXPERIMENTAL MEASUREMENTS; FIRST-PRINCIPLES; FOURIER TRANSFORMED INFRARED SPECTROSCOPY; GASPHASE; HYDROGENATED AMORPHOUS SILICON (A-SI:H); IN-SITU; KINETIC MODELS; KINETIC MONTE CARLO SIMULATION; OPERATING CONDITION; RATE PROCESS; SI SURFACES; SI(0 0 1); SILICON THIN FILM; STEADY STATE; SUBSTRATE TEMPERATURE; SURFACE CHEMICAL COMPOSITION; SURFACE COMPOSITIONS; SURFACE CONCENTRATION; SURFACE DANGLING BONDS; SURFACE GROWTH; SURFACE HYDRIDES; SURFACE HYDROGEN; SURFACE SITES; TEMPERATURE DEPENDENCE; TRANSITION RATES;

ACTIVATION ENERGY; AMORPHOUS FILMS; AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CHEMISORPTION; DANGLING BONDS; DENSITY FUNCTIONAL THEORY; DEPOSITION; DESORPTION; FORECASTING; GAS PERMEABLE MEMBRANES; HYDROGEN; INFRARED SPECTROSCOPY; MONTE CARLO METHODS; PHASE TRANSITIONS; PHYSISORPTION; PLASMA DEPOSITION; PLASMAS; QUANTUM CHEMISTRY; QUANTUM THEORY; RADIATION DAMAGE; REACTION RATES; SEMICONDUCTING SILICON COMPOUNDS; SILANES; SIMULATORS; SPECTROSCOPIC ANALYSIS; SURFACE DIFFUSION; THIN FILMS; WAVE FUNCTIONS;

SURFACE REACTIONS;

SILANE DERIVATIVE; SILICON;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; KINETICS; MONTE CARLO METHOD; QUANTUM THEORY; SURFACE PROPERTY; TEMPERATURE;

COMPUTER SIMULATION; KINETICS; MEMBRANES, ARTIFICIAL; MODELS, CHEMICAL; MONTE CARLO METHOD; QUANTUM THEORY; SILANES; SILICON; SURFACE PROPERTIES; TEMPERATURE;

EID: 67651146752     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3152846     Document Type: Article

References (39)

1. J. L. Crowley, Solid State Technol. 0038-111X 35, 94 (1992); C. Beneking, B. Rech, J. Folsch, and H. Wagner, Phys. Status Solidi B 0370-1972 194, 41 (1996) 10.1002/pssb.2221940106; A. Shah, P. Torres, R. Tscharner, N. Wyrsch, and H. Keppner, Science 0036-8075 285, 692 (1999). 10.1126/science.285.5428.692
2. J. Xi, R. E. Holllingsworth, R. Buitrago, D. Oakley, J. P. Cumalot, U. Nauenberg, J. McNeil, D. F. Anderson, and V. Perez-Mendez, Nucl. Instrum. Methods Phys. Res. A 0168-9002 301, 219 (1991). 10.1016/0168-9002(91)90462-Y
3. D. Yang, K. S. Ambo, and J. W. Holm-Kennedy, Sens. Actuators 0250-6874 14, 69 (1988). 10.1016/0250-6874(88)80007-6 (Pubitemid 18604791)
4. W. M. M. Kessels, M. C. M. van de Sanden, and D. C. Schram, J. Vac. Sci. Technol. A 0734-2101 18, 2153 (2000). 10.1116/1.1289541 (Pubitemid 30964819)
5. A. Gallagher, J. Appl. Phys. 0021-8979 63, 2406 (1988). 10.1063/1.341034
6. F. J. Kampas, Semicond. Semimetals 0080-8784 21 (A), 153 (1984). 10.1016/S0080-8784(08)63026-4
7. A. Gallagher, Mater. Res. Soc. Symp. Proc. 0272-9172 70, 3 (1986).
8. K. Winer, Phys. Rev. B 0163-1829 41, 7952 (1990). 10.1103/PhysRevB.41. 7952
9. R. A. Street, Phys. Rev. B 0163-1829 43, 2454 (1991) 10.1103/PhysRevB.43. 2454; R. A. Street, Phys. Rev. B 0163-1829 44, 10610 (1991). 10.1103/PhysRevB.44.10610
10. J. Perrin, Y. Takeda, N. Hirano, Y. Takeuchi, and A. Matsuda, Surf. Sci. 0039-6028 210, 114 (1989). 10.1016/0039-6028(89)90106-4
11. A. Matsuda and K. Tanaka, J. Appl. Phys. 0021-8979 60, 2351 (1986). 10.1063/1.337144
12. A. Matsuda, K. Nomoto, Y. Takeuchi, A. Suzuki, A. Yuuki, and J. Perrin, Surf. Sci. 0039-6028 227, 50 (1990). 10.1016/0039-6028(90)90390-T
13. S. Yamasaki, T. Umeda, J. Isoya, and K. Tanaka, J. Non-Cryst. Solids 0022-3093 83, 227 (1998).
14. I. M. P. Aarts, A. C. R. Pipino, M. C. M. van de Sanden, and W. M. M. Kessels, Appl. Phys. Lett. 0003-6951 90, 161918 (2007). 10.1063/1.2727561 (Pubitemid 46644813)
15. A. von Keudell and J. R. Abelson, Phys. Rev. B 0163-1829 59, 5791 (1999). 10.1103/PhysRevB.59.5791
16. T. Bakos, M. S. Valipa, E. S. Aydil, and D. Maroudas, Chem. Phys. Lett. 0009-2614 414, 61 (2005). 10.1016/j.cplett.2005.07.107 (Pubitemid 41401270)
17. M. C. M. van de Sanden, W. M. M. Kessels, A. H. M. Smets, B. A. Korevaar, R. J. Severens, and D. C. Schram, Mater. Res. Soc. Symp. Proc. 0272-9172 557, 13 (1999).
18. S. Ramalingam, D. Maroudas, and E. S. Aydil, J. Appl. Phys. 0021-8979 86, 2872 (1999) 10.1063/1.371136; S. Ramalingam, D. Maroudas, E. S. Aydil, and S. P. Walch, Surf. Sci. 0039-6028 418, L8 (1998). 10.1016/S0039-6028(98)00703-1
19. D. Maroudas, Adv. Chem. Eng. 0065-2377 28, 251 (2001). 10.1016/S0065-2377(01)28008-9
20. T. Bakos and D. Maroudas, IEEE Trans. Plasma Sci. 0093-3813 33, 230 (2005). 10.1109/TPS.2005.845002
21. W. M. M. Kessels, A. H. M. Smets, D. C. Marra, E. S. Aydil, D. C. Schram, and M. C. M. van de Sanden, Thin Solid Films 0040-6090 383, 154 (2001). 10.1016/S0040-6090(00)01594-7 (Pubitemid 32263340)
22. D. C. Marra, W. M. M. Kessels, M. C. M. van de Sanden, K. Kashefizadeh, and E. S. Aydil, Surf. Sci. 0039-6028 530, 1 (2003). 10.1016/S0039-6028(03) 00396-0
23. T. Singh, M. S. Valipa, T. J. Mountziaris, and D. Maroudas, Appl. Phys. Lett. 0003-6951 90, 251915 (2007). 10.1063/1.2746945 (Pubitemid 47141198)
24. T. Singh, M. S. Valipa, T. J. Mountziaris, and D. Maroudas, J. Chem. Phys. 0021-9606 127, 194703 (2007). 10.1063/1.2781393 (Pubitemid 350159089)
25. T. Bakos, M. S. Valipa, and D. Maroudas, J. Chem. Phys. 0021-9606 125, 104702 (2006). 10.1063/1.2345064 (Pubitemid 44403782)
26. T. Bakos, M. S. Valipa, and D. Maroudas, J. Chem. Phys. 0021-9606 122, 054703 (2005). 10.1063/1.1839556 (Pubitemid 41055347)
27. M. S. Valipa, T. Bakos, E. S. Aydil, and D. Maroudas, Phys. Rev. Lett. 0031-9007 95, 216102 (2005) 10.1103/PhysRevLett.95.216102; M. S. Valipa, T. Bakos, and D. Maroudas, Phys. Rev. B 0163-1829 74, 205324 (2006). 10.1103/PhysRevB.74.205324
28. T. Bakos, M. S. Valipa, and D. Maroudas, J. Chem. Phys. 0021-9606 126, 114704 (2007). 10.1063/1.2672799 (Pubitemid 46516370)
29. S. C. Pandey, T. Singh, and D. Maroudas, Appl. Phys. Lett. 0003-6951 93, 151913 (2008). 10.1063/1.2990641
30. A. B. Bortz, M. H. Kalos, and J. L. Lebowitz, J. Comput. Phys. 0021-9991 17, 10 (1975). 10.1016/0021-9991(75)90060-1
31. C. C. Battaile, D. J. Srolovitz, and J. E. Butler, J. Appl. Phys. 0021-8979 82, 6293 (1997). 10.1063/1.366532
32. F. M. Bulnes, V. D. Pereyra, and J. L. Riccardo, Phys. Rev. E 1063-651X 58, 86 (1998). 10.1103/PhysRevE.58.86
33. G. Kresse and J. Furthmuller, Phys. Rev. B 0163-1829 58, 11169 (1996). 10.1103/PhysRevB.54.11169
34. G. Henkelman, B. P. Uberuaga, and H. Jonnson, J. Chem. Phys. 0021-9606 113, 9901 (2000). 10.1063/1.1329672 (Pubitemid 32076883)
35. K. Reuter and M. Scheffler, Phys. Rev. B 0163-1829 73, 045433 (2006). 10.1103/PhysRevB.73.045433 (Pubitemid 43276678)
36. M. Ceriotti and M. Bernasconi, Phys. Rev. B 0163-1829 76, 245309 (2007). 10.1103/PhysRevB.76.245309
37. P. Smilauer, K. Mizushima, and D. D. Vvedensky, Phys. Rev. Lett. 0031-9007 81, 5600 (1998). 10.1103/PhysRevLett.81.5600
38. M. S. Valipa, E. S. Aydil, and D. Maroudas, Surf. Sci. 0039-6028 572, L339 (2004). 10.1016/j.susc.2004.08.029
39. D. C. Marra, E. A. Edelberg, R. L. Naone, and E. S. Aydil, J. Vac. Sci. Technol. A 0734-2101 16, 3199 (1998) 10.1116/1.581520; D. C. Marra, E. A. Edelberg, R. L. Naone, and E. S. Aydil, Appl. Surf. Sci. 0169-4332 133, 148 (1998). 10.1016/S0169-4332(98)00214-1