Silicon-based thin-film solar cells fabricated near the phase boundary by VHF PECVD technique

Solar Energy Materials and Solar Cells

Volumn 92, Issue 6, 2008, Pages 639-645

  Myong, Seung Yeop ^a   Sriprapha, Kobsak ^a   Yashiki, Yasutoshi ^a   Miyajima, Shinsuke ^a   Yamada, Akira ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

c Si:H; Highly hydrogen diluted a Si:H; Phase boundary; Silane coefficient; Stability; VHF PECVD

Indexed keywords

CHEMICAL VAPOR DEPOSITION; PHASE BOUNDARIES; SILICON; THIN FILM DEVICES;

SILANE COEFFICIENT; THERMAL ANNEALING;

SOLAR CELLS;

EID: 40849138997     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.01.010     Document Type: Article

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