Simulation of the influence of energetic atoms on Si homoepitaxial growth

Physical Review B - Condensed Matter and Materials Physics

Volumn 58, Issue 4, 1998, Pages 2050-2054

  Hensel, Hartmut ^a   Urbassek, Herbert M ^a  

^a Rheinland Pfälzische Technische Universität Kaiserslautern Landau   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000308410     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.2050     Document Type: Article

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